Discrete Semiconductor Products

SI7431DP-T1-E3

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MOSFET P-CH 200V 2.2A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 200V 2.2A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7431DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs [Max]	174 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs (Max)	FET Type	Package / Case
Vishay General Semiconductor - Diodes Division SI7431DP-T1-GE3	MOSFET (Metal Oxide)	1.9 W	135 nC	6 V 10 V	4 V	2.2 A	Surface Mount	200 V	-55 °C	150 °C	174 mOhm	PowerPAK® SO-8	20 V	P-Channel	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SI7431DP-T1-E3	MOSFET (Metal Oxide)	1.9 W	135 nC	6 V 10 V	4 V	2.2 A	Surface Mount	200 V	-55 °C	150 °C	174 mOhm	PowerPAK® SO-8	20 V	P-Channel	PowerPAK® SO-8

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General part information

P-Channel 200 V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources