Discrete Semiconductor Products
LSIC2SD120N40PA
ActiveLITTELFUSE
SILICON CARBIDE SCHOTTKY DIODE, DUAL, 1.2 KV, 84 A, 125 NC, SOT-227B
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Discrete Semiconductor Products
LSIC2SD120N40PA
ActiveLITTELFUSE
SILICON CARBIDE SCHOTTKY DIODE, DUAL, 1.2 KV, 84 A, 125 NC, SOT-227B
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | LSIC2SD120N40PA |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 42 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Diode Configuration | 2 Independent |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | SOT-227B - miniBLOC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
LSIC2SD120 Series
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
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Technical documentation and resources
