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Littelfuse power semiconductor silicon carbide LSIC2SD120NxxPA
Discrete Semiconductor Products

LSIC2SD120N80PA

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LITTELFUSE

SILICON CARBIDE SCHOTTKY DIODE, DUAL, 1.2 KV, 150 A, 240 NC, SOT-227B

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Littelfuse power semiconductor silicon carbide LSIC2SD120NxxPA
Discrete Semiconductor Products

LSIC2SD120N80PA

Active
LITTELFUSE

SILICON CARBIDE SCHOTTKY DIODE, DUAL, 1.2 KV, 150 A, 240 NC, SOT-227B

Technical Specifications

Parameters and characteristics for this part

SpecificationLSIC2SD120N80PA
Current - Average Rectified (Io) (per Diode)75 A
Current - Reverse Leakage @ Vr100 µA
Diode Configuration2 Independent
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSOT-227-4, miniBLOC
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageSOT-227B - miniBLOC
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If40 A
Voltage - Forward (Vf) (Max) @ If [Max]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 100$ 52.021m+
Tube 10$ 72.351m+
30$ 69.02
100$ 65.45
NewarkEach 1$ 77.661m+
5$ 74.27
10$ 70.89
25$ 67.64
50$ 66.14
100$ 64.12
TMEN/A 1$ 55.45<1d

Description

General part information

LSIC2SD120 Series

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.