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8-WDFN
Discrete Semiconductor Products

MBR8170TFSTBG

Active
ON Semiconductor

8A, 170V SCHOTTKY RECTIFIER IN Μ8-FL

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8-WDFN
Discrete Semiconductor Products

MBR8170TFSTBG

Active
ON Semiconductor

8A, 170V SCHOTTKY RECTIFIER IN Μ8-FL

Technical Specifications

Parameters and characteristics for this part

SpecificationMBR8170TFSTBG
Capacitance @ Vr, F237 pF
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr30 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / Case8-PowerWDFN
Speed200 mA, 500 ns
Supplier Device Package8-WDFN (3.3x3.3)
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]170 V
Voltage - Forward (Vf) (Max) @ If890 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.11
Digi-Reel® 1$ 1.11
Tape & Reel (TR) 1500$ 0.49
3000$ 0.46
7500$ 0.44
10500$ 0.42
NewarkEach 1000$ 0.55
2500$ 0.45
10000$ 0.43
ON SemiconductorN/A 1$ 0.44

Description

General part information

MBR8170TFS Series

This Schottky rectifier is high performance device in μ8-FL package. The lower forward voltage, less leakage current, and small junction capacitance is suitable for high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or reverse protection application. The μ8-FL package provides an excellent thermal performance, less land area of board space, and low profile.