MBR8170TFS Series

8A, 170V Schottky Rectifier in μ8-FL

Catalog

8A, 170V Schottky Rectifier in μ8-FL

Part	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Speed	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
ON Semiconductor MBR8170TFSTWG	237 pF	890 mV	8 A	175 ░C	-55 C	Schottky	200 mA 500 ns	30 µA	8-PowerWDFN	8-WDFN (3.3x3.3)	170 V	Surface Mount
ON Semiconductor MBR8170TFSTXG	237 pF	890 mV	8 A	175 ░C	-55 C	Schottky	200 mA 500 ns	30 µA	8-PowerWDFN	8-WDFN (3.3x3.3)	170 V	Surface Mount
ON Semiconductor MBR8170TFSTBG	237 pF	890 mV	8 A	175 ░C	-55 C	Schottky	200 mA 500 ns	30 µA	8-PowerWDFN	8-WDFN (3.3x3.3)	170 V	Surface Mount

Catalog

8A, 170V Schottky Rectifier in μ8-FL

Key Features

• Lower forward voltage

• Lower leakage current in high temperature

• Small junction capacitance

• High avalanche energy capability

• Alternative solution on SMA and SMB package

Description

This Schottky rectifier is high performance device in μ8-FL package. The lower forward voltage, less leakage current, and small junction capacitance is suitable for high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or reverse protection application. The μ8-FL package provides an excellent thermal performance, less land area of board space, and low profile.