Discrete Semiconductor Products

FDS5690-NBBM009A

Obsolete

ON Semiconductor

60V N-CHANNEL POWERTRENCH® MOSFET 7A, 28MΩ

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DocumentsDatasheet Package Drawing-751EB-SOIC8

Discrete Semiconductor Products

FDS5690-NBBM009A

Obsolete

ON Semiconductor

60V N-CHANNEL POWERTRENCH® MOSFET 7A, 28MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS5690-NBBM009A

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1107 pF
Mounting Type	Surface Mount
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

FDS5690 Series

60V N-Channel PowerTrench® MOSFET 10A, 14mΩ

Part	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS5690-NBBM009A	N-Channel	8-SOIC	60 V	Surface Mount	32 nC	MOSFET (Metal Oxide)	28 mOhm	8-SOIC	3.9 mm	0.154 in	1107 pF	4 V	7 A
ON Semiconductor FDS5690	N-Channel	8-SOIC	60 V	Surface Mount	32 nC	MOSFET (Metal Oxide)	28 mOhm	8-SOIC	3.9 mm	0.154 in	1107 pF	4 V	7 A	2.5 W	-55 °C	150 °C	20 V	6 V 10 V
ON Semiconductor FDS5682	N-Channel	8-SOIC	60 V	Surface Mount		MOSFET (Metal Oxide)	21 mOhm	8-SOIC	3.9 mm	0.154 in	1650 pF	2 V	7.5 A	2.5 W	-55 °C	150 °C	20 V	4.5 V 10 V	35 nC
ON Semiconductor FDS5692Z	N-Channel	8-SOIC	50 V	Surface Mount		MOSFET (Metal Oxide)		8-SOIC	3.9 mm	0.154 in	1025 pF	3 V	5.8 A	2.5 W	-55 °C	150 °C	20 V	4.5 V 10 V	25 nC	24 mOhm
ON Semiconductor FDS5672_F095	N-Channel	8-SOIC	60 V	Surface Mount		MOSFET (Metal Oxide)	10 mOhm	8-SOIC	3.9 mm	0.154 in	2200 pF	4 V	12 A	2.5 W	-55 °C	150 °C	20 V	6 V 10 V	45 nC
ON Semiconductor FDS5692Z	N-Channel	8-SOIC	50 V	Surface Mount		MOSFET (Metal Oxide)		8-SOIC	3.9 mm	0.154 in	1025 pF	3 V	5.8 A	2.5 W	-55 °C	150 °C	20 V	4.5 V 10 V	25 nC	24 mOhm
ON Semiconductor FDS5670	N-Channel	8-SOIC	60 V	Surface Mount		MOSFET (Metal Oxide)	14 mOhm	8-SOIC	3.9 mm	0.154 in	2900 pF	4 V	10 A	2.5 W	-55 °C	150 °C	20 V	6 V 10 V	70 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS5690 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.