FDS5690 Series

60V N-Channel PowerTrench® MOSFET 10A, 14mΩ

Catalog

60V N-Channel PowerTrench® MOSFET 10A, 14mΩ

Part	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS5690-NBBM009A	N-Channel	8-SOIC	60 V	Surface Mount	32 nC	MOSFET (Metal Oxide)	28 mOhm	8-SOIC	3.9 mm	0.154 in	1107 pF	4 V	7 A
ON Semiconductor FDS5690	N-Channel	8-SOIC	60 V	Surface Mount	32 nC	MOSFET (Metal Oxide)	28 mOhm	8-SOIC	3.9 mm	0.154 in	1107 pF	4 V	7 A	2.5 W	-55 °C	150 °C	20 V	6 V 10 V
ON Semiconductor FDS5682	N-Channel	8-SOIC	60 V	Surface Mount		MOSFET (Metal Oxide)	21 mOhm	8-SOIC	3.9 mm	0.154 in	1650 pF	2 V	7.5 A	2.5 W	-55 °C	150 °C	20 V	4.5 V 10 V	35 nC
ON Semiconductor FDS5692Z	N-Channel	8-SOIC	50 V	Surface Mount		MOSFET (Metal Oxide)		8-SOIC	3.9 mm	0.154 in	1025 pF	3 V	5.8 A	2.5 W	-55 °C	150 °C	20 V	4.5 V 10 V	25 nC	24 mOhm
ON Semiconductor FDS5672_F095	N-Channel	8-SOIC	60 V	Surface Mount		MOSFET (Metal Oxide)	10 mOhm	8-SOIC	3.9 mm	0.154 in	2200 pF	4 V	12 A	2.5 W	-55 °C	150 °C	20 V	6 V 10 V	45 nC
ON Semiconductor FDS5692Z	N-Channel	8-SOIC	50 V	Surface Mount		MOSFET (Metal Oxide)		8-SOIC	3.9 mm	0.154 in	1025 pF	3 V	5.8 A	2.5 W	-55 °C	150 °C	20 V	4.5 V 10 V	25 nC	24 mOhm
ON Semiconductor FDS5670	N-Channel	8-SOIC	60 V	Surface Mount		MOSFET (Metal Oxide)	14 mOhm	8-SOIC	3.9 mm	0.154 in	2900 pF	4 V	10 A	2.5 W	-55 °C	150 °C	20 V	6 V 10 V	70 nC

Catalog

60V N-Channel PowerTrench® MOSFET 10A, 14mΩ

Key Features

• 7 A, 60 VRDS(on)= 0.028 Ω @ VGS= 10 VRDS(on)= 0.033 Ω @ VGS= 6 V

• Low gate charge (23nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.