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8-SOIC
Discrete Semiconductor Products

FDS5670

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 10 A, 0.014 OHM, SOIC, SURFACE MOUNT

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8-SOIC
Discrete Semiconductor Products

FDS5670

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 10 A, 0.014 OHM, SOIC, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS5670
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]70 nC
Input Capacitance (Ciss) (Max) @ Vds2900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs14 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.72
10$ 1.76
100$ 1.21
500$ 0.97
1000$ 0.90
Digi-Reel® 1$ 2.72
10$ 1.76
100$ 1.21
500$ 0.97
1000$ 0.90
Tape & Reel (TR) 2500$ 0.83
NewarkEach (Supplied on Full Reel) 2500$ 0.93
ON SemiconductorN/A 1$ 0.88

Description

General part information

FDS5690 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.