Discrete Semiconductor Products

NXPSC04650DJ

Obsolete

WeEn Semiconductors

DIODE SIL CARBIDE 650V 4A DPAK

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Discrete Semiconductor Products

NXPSC04650DJ

Obsolete

WeEn Semiconductors

DIODE SIL CARBIDE 650V 4A DPAK

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NXPSC04650DJ

Capacitance @ Vr, F	130 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	170 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

NXPSC Series

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Voltage - Forward (Vf) (Max) @ If [Max]
WeEn Semiconductors NXPSC08650BJ	230 µA	8 A	500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	D2PAK
WeEn Semiconductors NXPSC04650Q	170 µA	4 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	TO-220-2	175 ░C	TO-220AC
WeEn Semiconductors NXPSC04650DJ	170 µA	4 A	500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	DPAK
WeEn Semiconductors NXPSC166506Q	100 µA	16 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	534 pF	1.7 V	TO-220-2	175 ░C	TO-220AC
WeEn Semiconductors NXPSC086506Q	230 µA	8 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	TO-220-2	175 ░C	TO-220AC
WeEn Semiconductors NXPSC04650X6Q	170 µA	4 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	TO-220-2 Full Pack Isolated Tab	175 ░C	TO-220F
WeEn Semiconductors NXPSC20650W6Q	250 µA		500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky		1.7 V	TO-247-3	175 ░C	TO-247-3	20 A	1 Pair Common Cathode
WeEn Semiconductors NXPSC08650DJ	230 µA	8 A	500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	DPAK
WeEn Semiconductors NXPSC046506Q	170 µA	4 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	TO-220-2	175 ░C	TO-220AC
WeEn Semiconductors NXPSC06650X6Q	200 µA	6 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	190 pF	6 A	TO-220-2 Full Pack Isolated Tab	175 ░C	TO-220F			1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

NXPSC Series

Diode 650 V 4A Surface Mount DPAK

Documents

Technical documentation and resources

No documents available