NXPSC Series

Catalog

DIODE SIL CARBIDE 650V 8A D2PAK

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Voltage - Forward (Vf) (Max) @ If [Max]
WeEn Semiconductors NXPSC08650BJ	230 µA	8 A	500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	D2PAK
WeEn Semiconductors NXPSC04650Q	170 µA	4 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	TO-220-2	175 ░C	TO-220AC
WeEn Semiconductors NXPSC04650DJ	170 µA	4 A	500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	DPAK
WeEn Semiconductors NXPSC166506Q	100 µA	16 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	534 pF	1.7 V	TO-220-2	175 ░C	TO-220AC
WeEn Semiconductors NXPSC086506Q	230 µA	8 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	TO-220-2	175 ░C	TO-220AC
WeEn Semiconductors NXPSC04650X6Q	170 µA	4 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	TO-220-2 Full Pack Isolated Tab	175 ░C	TO-220F
WeEn Semiconductors NXPSC20650W6Q	250 µA		500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky		1.7 V	TO-247-3	175 ░C	TO-247-3	20 A	1 Pair Common Cathode
WeEn Semiconductors NXPSC08650DJ	230 µA	8 A	500 mA	Surface Mount	650 V	SiC (Silicon Carbide) Schottky	260 pF	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	DPAK
WeEn Semiconductors NXPSC046506Q	170 µA	4 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	130 pF	1.7 V	TO-220-2	175 ░C	TO-220AC
WeEn Semiconductors NXPSC06650X6Q	200 µA	6 A	500 mA	Through Hole	650 V	SiC (Silicon Carbide) Schottky	190 pF	6 A	TO-220-2 Full Pack Isolated Tab	175 ░C	TO-220F			1.7 V