Discrete Semiconductor Products

SIC20120PTA-BP

Obsolete

DIODE SIL CARB 1.2KV 10A TO247-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 10A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	SIC20120PTA-BP

Capacitance @ Vr, F	750 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Speed	No Recovery Time
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Mounting Type	Speed	Reverse Recovery Time (trr)
Micro Commercial Components SIC20120PTA-BP	175 ░C	-55 C	TO-247-3	10 A	2 µA	TO-247-3	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	750 pF	Through Hole	No Recovery Time
Micro Commercial Components SIC20120PTP-BP	175 ░C	-55 C	TO-247-2L		60 µA	TO-247-2	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	1190 pF	Through Hole	No Recovery Time	0 ns
Micro Commercial Components SIC20120PTA-BP	175 ░C	-55 C	TO-247-3	10 A	2 µA	TO-247-3	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	750 pF	Through Hole	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 10A Through Hole TO-247-3

Technical documentation and resources