SIC20120 Series

Catalog

DIODE SIL CARB 1.2KV 10A TO247-3

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Mounting Type	Speed	Reverse Recovery Time (trr)
Micro Commercial Components SIC20120PTA-BP	175 ░C	-55 C	TO-247-3	10 A	2 µA	TO-247-3	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	750 pF	Through Hole	No Recovery Time
Micro Commercial Components SIC20120PTP-BP	175 ░C	-55 C	TO-247-2L		60 µA	TO-247-2	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	1190 pF	Through Hole	No Recovery Time	0 ns
Micro Commercial Components SIC20120PTA-BP	175 ░C	-55 C	TO-247-3	10 A	2 µA	TO-247-3	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	750 pF	Through Hole	No Recovery Time