SIC20120PTP-BP

Obsolete

INTERFACE

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Discrete Semiconductor Products

Obsolete

INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	SIC20120PTP-BP

Capacitance @ Vr, F	1190 pF
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2L
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Mounting Type	Speed	Reverse Recovery Time (trr)
Micro Commercial Components SIC20120PTA-BP	175 ░C	-55 C	TO-247-3	10 A	2 µA	TO-247-3	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	750 pF	Through Hole	No Recovery Time
Micro Commercial Components SIC20120PTP-BP	175 ░C	-55 C	TO-247-2L		60 µA	TO-247-2	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	1190 pF	Through Hole	No Recovery Time	0 ns
Micro Commercial Components SIC20120PTA-BP	175 ░C	-55 C	TO-247-3	10 A	2 µA	TO-247-3	1.8 V	SiC (Silicon Carbide) Schottky	1.2 kV	750 pF	Through Hole	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 20A Through Hole TO-247-2L

Technical documentation and resources