Discrete Semiconductor Products
STD6N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
STD6N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STD6N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 226 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 1.35 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD6N65M2 Series
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Documents
Technical documentation and resources