STD6N65M2 Series

N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package

Catalog

N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package

Part	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
STMicroelectronics STD6N65M2	DPAK	N-Channel	150 °C	-55 °C	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	60 W	1.35 Ohm	4 A	25 V	9.8 nC	226 pF	MOSFET (Metal Oxide)	10 V	4 V

Catalog

N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.