Discrete Semiconductor Products

PCDD08120G1_L2_00001

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SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE

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Discrete Semiconductor Products

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SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	PCDD08120G1_L2_00001

Capacitance @ Vr, F	418 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-252AA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Speed	Technology	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr
Panjit International Inc. PCDP0665G1_T0_00001	TO-220AC	1.7 V	6 A	175 ░C	-55 °C	6 A	500 mA	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	650 V	228 pF	50 µA
Panjit International Inc. PCDD08120G1_L2_00001	TO-252AA		1.7 V	175 ░C	-55 °C	8 A	500 mA	SiC (Silicon Carbide) Schottky	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 kV	418 pF	60 µA
Panjit International Inc. PCDD0665G1_L2_00001	TO-252AA	1.7 V	6 A	175 ░C	-55 °C	6 A	500 mA	SiC (Silicon Carbide) Schottky	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	650 V	228 pF	50 µA

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General part information

SIC SCHOTTKY DIODES 1200V SIC SCHOTTKY BARRIER DIODE

Technical documentation and resources

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