Discrete Semiconductor Products

PCDP0665G1_T0_00001

Active

TO-220AC, SIC

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

TO-220AC, SIC

Technical Specifications

Parameters and characteristics for this part

Specification	PCDP0665G1_T0_00001

Capacitance @ Vr, F	228 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)
Panjit International Inc. PCDP0665G1_T0_00001	No Recovery Time	228 pF	175 ░C	-55 C	650 V	TO-220-2	TO-220AC	SiC (Silicon Carbide) Schottky	1.7 V	0 ns	Through Hole	50 µA	6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 6A Through Hole TO-220AC

Technical documentation and resources

No documents available