SiC Gen.1 Series
Manufacturer: Panjit International Inc.
SIC SCHOTTKY DIODES 650V SIC SCHOTTKY BARRIER DIODE
| Part | Reverse Recovery Time (trr) | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Speed | Technology | Mounting Type | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 0 ns | TO-220AC | 1.7 V | 6 A | 175 ░C | -55 °C | 6 A | 500 mA | SiC (Silicon Carbide) Schottky | Through Hole | TO-220-2 | 650 V | 228 pF | 50 µA |
Panjit International Inc. | 0 ns | TO-252AA | 1.7 V | 175 ░C | -55 °C | 8 A | 500 mA | SiC (Silicon Carbide) Schottky | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.2 kV | 418 pF | 60 µA | |
Panjit International Inc. | 0 ns | TO-252AA | 1.7 V | 6 A | 175 ░C | -55 °C | 6 A | 500 mA | SiC (Silicon Carbide) Schottky | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 650 V | 228 pF | 50 µA |