
Discrete Semiconductor Products
JANTXV1N3070UR-1
ActiveMicrochip Technology
DIODE GEN PURP 175V 100MA DO7
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DocumentsJANTXV1N3070UR-1 | Datasheet

Discrete Semiconductor Products
JANTXV1N3070UR-1
ActiveMicrochip Technology
DIODE GEN PURP 175V 100MA DO7
Deep-Dive with AI
DocumentsJANTXV1N3070UR-1 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV1N3070UR-1 |
|---|---|
| Current - Average Rectified (Io) | 100 mA |
| Current - Reverse Leakage | 100 nA |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | DO-7, Axial, DO-204AA |
| Package Name | DO-7 |
| Qualification | MIL-PRF-19500, 169 |
| Reverse Recovery Time (trr) | 50 µs |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 175 V |
| Voltage - Forward (Vf) (Max) | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
CAD
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Description
General part information
1N3070 Series
Diode 175 V 100mA Through Hole DO-7
Documents
Technical documentation and resources