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DO-7
Discrete Semiconductor Products

JANTXV1N3070UR-1

Active
Microchip Technology

DIODE GEN PURP 175V 100MA DO7

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DO-7
Discrete Semiconductor Products

JANTXV1N3070UR-1

Active
Microchip Technology

DIODE GEN PURP 175V 100MA DO7

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV1N3070UR-1
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage100 nA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseDO-7, Axial, DO-204AA
Package NameDO-7
QualificationMIL-PRF-19500, 169
Reverse Recovery Time (trr)50 µs
SpeedAny Speed, Small Signal
Speed - Fast Recovery (Maximum)200 mA
Speed - Small Signal Current Max200 mA, 200 mA, 200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)175 V
Voltage - Forward (Vf) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

CAD

3D models and CAD resources for this part

Description

General part information

1N3070 Series

Diode 175 V 100mA Through Hole DO-7

Documents

Technical documentation and resources