Discrete Semiconductor Products

IRF7342PBF

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INFINEON

IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 105 MOHM;

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF7342PBF

Unknown

INFINEON

IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 105 MOHM;

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DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7342PBF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	55 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	690 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	105 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

IRF734 Series

Part	FET Feature	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case	Package / Case	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IRF7341PBF	Logic Level Gate	MOSFET (Metal Oxide)	4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	2 W	55 V	740 pF	Surface Mount	150 °C	-55 °C	1 V	8-SO
INFINEON IRF7343QTRPBF		MOSFET (Metal Oxide)	3.4 A 4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	N and P-Channel	2 W	55 V	740 pF	Surface Mount			1 V	8-SO
INFINEON IRF7342PBF	Logic Level Gate	MOSFET (Metal Oxide)	3.4 A		0.154 in	8-SOIC	3.9 mm	2 P-Channel (Dual)	2 W	55 V		Surface Mount	150 °C	-55 °C	1 V	8-SO	38 nC	690 pF	105 mOhm
INFINEON IRF7342TRPBF	Logic Level Gate	MOSFET (Metal Oxide)	3.4 A		0.154 in	8-SOIC	3.9 mm	2 P-Channel (Dual)	2 W	55 V		Surface Mount	150 °C	-55 °C	1 V	8-SO	38 nC	690 pF	105 mOhm
INFINEON IRF7342QTRPBF	Logic Level Gate	MOSFET (Metal Oxide)	3.4 A		0.154 in	8-SOIC	3.9 mm	2 P-Channel (Dual)	2 W	55 V		Surface Mount			1 V	8-SO	38 nC	690 pF	105 mOhm
INFINEON IRF7343TRPBF		MOSFET (Metal Oxide)	3.4 A 4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	N and P-Channel	2 W	55 V	740 pF	Surface Mount	150 °C	-55 °C	1 V	8-SO
INFINEON IRF7341TRPBF	Logic Level Gate	MOSFET (Metal Oxide)	4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	2 W	55 V	740 pF	Surface Mount	150 °C	-55 °C	1 V	8-SO
INFINEON IRF7341GTRPBF		MOSFET (Metal Oxide)	5.1 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	2.4 W	55 V	780 pF	Surface Mount	175 °C	-55 °C	1 V	8-SO	44 nC
INFINEON IRF7343PBF		MOSFET (Metal Oxide)	3.4 A 4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	N and P-Channel	2 W	55 V	740 pF	Surface Mount	150 °C	-55 °C	1 V	8-SO

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IRF734 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources