Zenode.ai Logo
Beta
Log InSign Up
IRF7342TRPBF
Discrete Semiconductor Products

IRF7342TRPBF

Active
INFINEON

DUAL MOSFET, P CHANNEL, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 OHM

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsIR Part Numbering SystemDatasheet+3
IRF7342TRPBF
Discrete Semiconductor Products

IRF7342TRPBF

Active
INFINEON

DUAL MOSFET, P CHANNEL, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 OHM

Deep-Dive with AI

DocumentsIR Part Numbering SystemDatasheet+3

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF7342TRPBF
Configuration2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C3.4 A
Drain to Source Voltage (Vdss)55 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]690 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Power - Max [Max]2 W
Rds On (Max) @ Id, Vgs [Max]105 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

IRF734 Series

PartFET FeatureTechnologyCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsPackage / CasePackage / CasePackage / CaseConfigurationPower - Max [Max]Drain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsMounting TypeOperating Temperature [Max]Operating Temperature [Min]Vgs(th) (Max) @ IdSupplier Device PackageGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ Vds [Max]Rds On (Max) @ Id, Vgs [Max]
IRF7341PBF
INFINEON
IRF7341PBF
Logic Level Gate
MOSFET (Metal Oxide)
4.7 A
50 mOhm
0.154 in
8-SOIC
3.9 mm
2 N-Channel (Dual)
2 W
55 V
740 pF
Surface Mount
150 °C
-55 °C
1 V
8-SO
IRF7343QTRPBF
INFINEON
IRF7343QTRPBF
MOSFET (Metal Oxide)
3.4 A
4.7 A
50 mOhm
0.154 in
8-SOIC
3.9 mm
N and P-Channel
2 W
55 V
740 pF
Surface Mount
1 V
8-SO
IRF7342PBF
INFINEON
IRF7342PBF
Logic Level Gate
MOSFET (Metal Oxide)
3.4 A
0.154 in
8-SOIC
3.9 mm
2 P-Channel (Dual)
2 W
55 V
Surface Mount
150 °C
-55 °C
1 V
8-SO
38 nC
690 pF
105 mOhm
IRF7342TRPBF
INFINEON
IRF7342TRPBF
Logic Level Gate
MOSFET (Metal Oxide)
3.4 A
0.154 in
8-SOIC
3.9 mm
2 P-Channel (Dual)
2 W
55 V
Surface Mount
150 °C
-55 °C
1 V
8-SO
38 nC
690 pF
105 mOhm
IRF7342QTRPBF
INFINEON
IRF7342QTRPBF
Logic Level Gate
MOSFET (Metal Oxide)
3.4 A
0.154 in
8-SOIC
3.9 mm
2 P-Channel (Dual)
2 W
55 V
Surface Mount
1 V
8-SO
38 nC
690 pF
105 mOhm
IRF7343TRPBF
INFINEON
IRF7343TRPBF
MOSFET (Metal Oxide)
3.4 A
4.7 A
50 mOhm
0.154 in
8-SOIC
3.9 mm
N and P-Channel
2 W
55 V
740 pF
Surface Mount
150 °C
-55 °C
1 V
8-SO
IRF7341TRPBF
INFINEON
IRF7341TRPBF
Logic Level Gate
MOSFET (Metal Oxide)
4.7 A
50 mOhm
0.154 in
8-SOIC
3.9 mm
2 N-Channel (Dual)
2 W
55 V
740 pF
Surface Mount
150 °C
-55 °C
1 V
8-SO
IRF7341GTRPBF
INFINEON
IRF7341GTRPBF
MOSFET (Metal Oxide)
5.1 A
50 mOhm
0.154 in
8-SOIC
3.9 mm
2 N-Channel (Dual)
2.4 W
55 V
780 pF
Surface Mount
175 °C
-55 °C
1 V
8-SO
44 nC
IRF7343PBF
INFINEON
IRF7343PBF
MOSFET (Metal Oxide)
3.4 A
4.7 A
50 mOhm
0.154 in
8-SOIC
3.9 mm
N and P-Channel
2 W
55 V
740 pF
Surface Mount
150 °C
-55 °C
1 V
8-SO

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.22
10$ 1.00
100$ 0.78
500$ 0.66
1000$ 0.54
2000$ 0.51
Digi-Reel® 1$ 1.22
10$ 1.00
100$ 0.78
500$ 0.66
1000$ 0.54
2000$ 0.51
N/A 13027$ 1.75
Tape & Reel (TR) 4000$ 0.51
8000$ 0.48
12000$ 0.46
MouserN/A 1$ 1.59
10$ 1.05
25$ 1.04
100$ 0.73
250$ 0.73
500$ 0.59
1000$ 0.52
2000$ 0.50
4000$ 0.47
NewarkEach (Supplied on Cut Tape) 1$ 1.59
10$ 1.07
25$ 1.06
50$ 0.92
100$ 0.78
250$ 0.77
500$ 0.63
1000$ 0.54

Description

General part information

IRF734 Series

The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.