IRF734 Series

Manufacturer: INFINEON

Catalog

MOSFET 2N-CH 55V 4.7A 8SO

Part	FET Feature	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case	Package / Case	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IRF7341PBF	Logic Level Gate	MOSFET (Metal Oxide)	4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	2 W	55 V	740 pF	Surface Mount	150 °C	-55 °C	1 V	8-SO
INFINEON IRF7343QTRPBF		MOSFET (Metal Oxide)	3.4 A 4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	N and P-Channel	2 W	55 V	740 pF	Surface Mount			1 V	8-SO
INFINEON IRF7342PBF	Logic Level Gate	MOSFET (Metal Oxide)	3.4 A		0.154 in	8-SOIC	3.9 mm	2 P-Channel (Dual)	2 W	55 V		Surface Mount	150 °C	-55 °C	1 V	8-SO	38 nC	690 pF	105 mOhm
INFINEON IRF7342TRPBF	Logic Level Gate	MOSFET (Metal Oxide)	3.4 A		0.154 in	8-SOIC	3.9 mm	2 P-Channel (Dual)	2 W	55 V		Surface Mount	150 °C	-55 °C	1 V	8-SO	38 nC	690 pF	105 mOhm
INFINEON IRF7342QTRPBF	Logic Level Gate	MOSFET (Metal Oxide)	3.4 A		0.154 in	8-SOIC	3.9 mm	2 P-Channel (Dual)	2 W	55 V		Surface Mount			1 V	8-SO	38 nC	690 pF	105 mOhm
INFINEON IRF7343TRPBF		MOSFET (Metal Oxide)	3.4 A 4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	N and P-Channel	2 W	55 V	740 pF	Surface Mount	150 °C	-55 °C	1 V	8-SO
INFINEON IRF7341TRPBF	Logic Level Gate	MOSFET (Metal Oxide)	4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	2 W	55 V	740 pF	Surface Mount	150 °C	-55 °C	1 V	8-SO
INFINEON IRF7341GTRPBF		MOSFET (Metal Oxide)	5.1 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	2.4 W	55 V	780 pF	Surface Mount	175 °C	-55 °C	1 V	8-SO	44 nC
INFINEON IRF7343PBF		MOSFET (Metal Oxide)	3.4 A 4.7 A	50 mOhm	0.154 in	8-SOIC	3.9 mm	N and P-Channel	2 W	55 V	740 pF	Surface Mount	150 °C	-55 °C	1 V	8-SO