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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IRF1404STRLPBF

Active
INFINEON

MOSFET, N-CH, 40V, 162A TO-263

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DocumentsIR Part Numbering SystemDatasheet
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IRF1404STRLPBF

Active
INFINEON

MOSFET, N-CH, 40V, 162A TO-263

Deep-Dive with AI

DocumentsIR Part Numbering SystemDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF1404STRLPBF
Current - Continuous Drain (Id) @ 25°C162 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]200 nC
Input Capacitance (Ciss) (Max) @ Vds7360 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)3.8 W, 200 W
Rds On (Max) @ Id, Vgs4 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

IRF1404 Series

PartPackage / CasePower Dissipation (Max)Vgs(th) (Max) @ IdOperating Temperature [Max]Operating Temperature [Min]Rds On (Max) @ Id, VgsFET TypeTechnologyGate Charge (Qg) (Max) @ Vgs [Max]Drive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ VdsVgs (Max)Mounting TypeDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CSupplier Device PackageGate Charge (Qg) (Max) @ Vgs
STMICROELECTRONICS L4941BDT-TR
INFINEON
IRF1404ZSTRLPBF
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
200 W
4 V
175 °C
-55 °C
3.7 mOhm
N-Channel
MOSFET (Metal Oxide)
150 nC
10 V
4340 pF
20 V
Surface Mount
40 V
180 A
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IRF1404STRLPBF
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
3.8 W
200 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
200 nC
10 V
7360 pF
20 V
Surface Mount
40 V
162 A
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
94-2110
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
3.8 W
200 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
200 nC
10 V
7360 pF
20 V
Surface Mount
40 V
162 A
D2PAK
TO-220AB PKG
INFINEON
IRF1404PBF
TO-220-3
333 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
10 V
5669 pF
20 V
Through Hole
40 V
202 A
TO-220AB
196 nC
TO-262-3
INFINEON
64-2105PBF
I2PAK
TO-262-3 Long Leads
TO-262AA
200 W
4 V
175 °C
-55 °C
3.7 mOhm
N-Channel
MOSFET (Metal Oxide)
150 nC
10 V
4340 pF
20 V
Through Hole
40 V
75 A
TO-262
Infineon Technologies AG-IRF3205ZLPBF MOSFETs Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-262 Tube
INFINEON
IRF1404LPBF
I2PAK
TO-262-3 Long Leads
TO-262AA
3.8 W
200 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
200 nC
10 V
7360 pF
20 V
Through Hole
40 V
162 A
TO-262
TO-220AB PKG
INFINEON
IRF1404ZPBF
TO-220-3
200 W
4 V
175 °C
-55 °C
3.7 mOhm
N-Channel
MOSFET (Metal Oxide)
150 nC
10 V
4340 pF
20 V
Through Hole
40 V
180 A
TO-220AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IRF1404STRRPBF
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
3.8 W
200 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
200 nC
10 V
7360 pF
20 V
Surface Mount
40 V
162 A
D2PAK
TO-262-3
INFINEON
64-2042
I2PAK
TO-262-3 Long Leads
TO-262AA
220 W
4 V
175 °C
-55 °C
3.7 mOhm
N-Channel
MOSFET (Metal Oxide)
150 nC
10 V
4340 pF
20 V
Through Hole
40 V
75 A
TO-262

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.26
10$ 2.13
100$ 1.48
Digi-Reel® 1$ 3.26
10$ 2.13
100$ 1.48
N/A 733$ 2.28
Tape & Reel (TR) 800$ 1.06
NewarkEach (Supplied on Cut Tape) 1$ 3.28
10$ 2.43
25$ 2.27
50$ 2.09
100$ 1.92
250$ 1.81
500$ 1.61
1600$ 1.53

Description

General part information

IRF1404 Series

N-Channel 40 V 162A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

Documents

Technical documentation and resources

IR Part Numbering System

Related Document

Datasheet

Datasheet