Discrete Semiconductor Products

IRF1404PBF

NRND

INFINEON

POWER MOSFET, N CHANNEL, 40 V, 202 A, 0.004 OHM, TO-220AB, THROUGH HOLE

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF1404PBF

NRND

INFINEON

POWER MOSFET, N CHANNEL, 40 V, 202 A, 0.004 OHM, TO-220AB, THROUGH HOLE

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DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1404PBF

Current - Continuous Drain (Id) @ 25°C	202 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	196 nC
Input Capacitance (Ciss) (Max) @ Vds	5669 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF1404 Series

Part	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
INFINEON IRF1404ZSTRLPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 W	4 V	175 °C	-55 °C	3.7 mOhm	N-Channel	MOSFET (Metal Oxide)	150 nC	10 V	4340 pF	20 V	Surface Mount	40 V	180 A
INFINEON IRF1404STRLPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.8 W 200 W	4 V	175 °C	-55 °C	4 mOhm	N-Channel	MOSFET (Metal Oxide)	200 nC	10 V	7360 pF	20 V	Surface Mount	40 V	162 A	D2PAK
INFINEON 94-2110	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.8 W 200 W	4 V	175 °C	-55 °C	4 mOhm	N-Channel	MOSFET (Metal Oxide)	200 nC	10 V	7360 pF	20 V	Surface Mount	40 V	162 A	D2PAK
INFINEON IRF1404PBF	TO-220-3	333 W	4 V	175 °C	-55 °C	4 mOhm	N-Channel	MOSFET (Metal Oxide)		10 V	5669 pF	20 V	Through Hole	40 V	202 A	TO-220AB	196 nC
INFINEON 64-2105PBF	I2PAK TO-262-3 Long Leads TO-262AA	200 W	4 V	175 °C	-55 °C	3.7 mOhm	N-Channel	MOSFET (Metal Oxide)	150 nC	10 V	4340 pF	20 V	Through Hole	40 V	75 A	TO-262
INFINEON IRF1404LPBF	I2PAK TO-262-3 Long Leads TO-262AA	3.8 W 200 W	4 V	175 °C	-55 °C	4 mOhm	N-Channel	MOSFET (Metal Oxide)	200 nC	10 V	7360 pF	20 V	Through Hole	40 V	162 A	TO-262
INFINEON IRF1404ZPBF	TO-220-3	200 W	4 V	175 °C	-55 °C	3.7 mOhm	N-Channel	MOSFET (Metal Oxide)	150 nC	10 V	4340 pF	20 V	Through Hole	40 V	180 A	TO-220AB
INFINEON IRF1404STRRPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.8 W 200 W	4 V	175 °C	-55 °C	4 mOhm	N-Channel	MOSFET (Metal Oxide)	200 nC	10 V	7360 pF	20 V	Surface Mount	40 V	162 A	D2PAK
INFINEON 64-2042	I2PAK TO-262-3 Long Leads TO-262AA	220 W	4 V	175 °C	-55 °C	3.7 mOhm	N-Channel	MOSFET (Metal Oxide)	150 nC	10 V	4340 pF	20 V	Through Hole	40 V	75 A	TO-262

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	385	$ 2.74
	Tube	1	$ 2.09
		10	$ 1.36
		100	$ 0.94
		500	$ 0.90

Description

General part information

IRF1404 Series

The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.

Documents

Technical documentation and resources