Zenode.ai Logo
Beta
Log InSign Up
STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

IRF1404ZSTRLPBF

Active
INFINEON

MOSFET, N-CH, 40V, 120A, TO-263-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENApplication Note EN+1
STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

IRF1404ZSTRLPBF

Active
INFINEON

MOSFET, N-CH, 40V, 120A, TO-263-3

Deep-Dive with AI

DocumentsTechnical Data Sheet ENApplication Note EN+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF1404ZSTRLPBF
Current - Continuous Drain (Id) @ 25°C180 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]150 nC
Input Capacitance (Ciss) (Max) @ Vds4340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)200 W
Rds On (Max) @ Id, Vgs3.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

IRF1404 Series

PartPackage / CasePower Dissipation (Max)Vgs(th) (Max) @ IdOperating Temperature [Max]Operating Temperature [Min]Rds On (Max) @ Id, VgsFET TypeTechnologyGate Charge (Qg) (Max) @ Vgs [Max]Drive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ VdsVgs (Max)Mounting TypeDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CSupplier Device PackageGate Charge (Qg) (Max) @ Vgs
STMICROELECTRONICS L4941BDT-TR
INFINEON
IRF1404ZSTRLPBF
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
200 W
4 V
175 °C
-55 °C
3.7 mOhm
N-Channel
MOSFET (Metal Oxide)
150 nC
10 V
4340 pF
20 V
Surface Mount
40 V
180 A
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IRF1404STRLPBF
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
3.8 W
200 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
200 nC
10 V
7360 pF
20 V
Surface Mount
40 V
162 A
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
94-2110
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
3.8 W
200 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
200 nC
10 V
7360 pF
20 V
Surface Mount
40 V
162 A
D2PAK
TO-220AB PKG
INFINEON
IRF1404PBF
TO-220-3
333 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
10 V
5669 pF
20 V
Through Hole
40 V
202 A
TO-220AB
196 nC
TO-262-3
INFINEON
64-2105PBF
I2PAK
TO-262-3 Long Leads
TO-262AA
200 W
4 V
175 °C
-55 °C
3.7 mOhm
N-Channel
MOSFET (Metal Oxide)
150 nC
10 V
4340 pF
20 V
Through Hole
40 V
75 A
TO-262
Infineon Technologies AG-IRF3205ZLPBF MOSFETs Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-262 Tube
INFINEON
IRF1404LPBF
I2PAK
TO-262-3 Long Leads
TO-262AA
3.8 W
200 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
200 nC
10 V
7360 pF
20 V
Through Hole
40 V
162 A
TO-262
TO-220AB PKG
INFINEON
IRF1404ZPBF
TO-220-3
200 W
4 V
175 °C
-55 °C
3.7 mOhm
N-Channel
MOSFET (Metal Oxide)
150 nC
10 V
4340 pF
20 V
Through Hole
40 V
180 A
TO-220AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
INFINEON
IRF1404STRRPBF
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
3.8 W
200 W
4 V
175 °C
-55 °C
4 mOhm
N-Channel
MOSFET (Metal Oxide)
200 nC
10 V
7360 pF
20 V
Surface Mount
40 V
162 A
D2PAK
TO-262-3
INFINEON
64-2042
I2PAK
TO-262-3 Long Leads
TO-262AA
220 W
4 V
175 °C
-55 °C
3.7 mOhm
N-Channel
MOSFET (Metal Oxide)
150 nC
10 V
4340 pF
20 V
Through Hole
40 V
75 A
TO-262

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.86
10$ 1.85
100$ 1.28
Digi-Reel® 1$ 2.86
10$ 1.85
100$ 1.28
N/A 1163$ 2.42
Tape & Reel (TR) 800$ 0.98
1600$ 0.91
2400$ 0.89
NewarkEach (Supplied on Cut Tape) 1$ 2.78
10$ 2.15

Description

General part information

IRF1404 Series

N-Channel 40 V 180A (Tc) 200W (Tc) Surface Mount PG-TO263-3