2N4931
Active250 V POWER BJT TO-39 ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
2N4931
Active250 V POWER BJT TO-39 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N4931 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| Current - Collector Cutoff (Max) [Max] | 250 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 hFE |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-39 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 9.33 | |
| Microchip Direct | N/A | 1 | $ 10.05 | |
| Newark | Each | 100 | $ 9.33 | |
| 500 | $ 8.98 | |||
Description
General part information
2N4931-Transistor Series
This specification covers the performance requirements for PNP, silicon, high-voltage 2N3743, 2N4930 and 2N4931 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/397. Two levels of product assurance (JANHC and JANKC) for die are provided for each unencapsulated device. The device package outlines are as follows: TO-39 , and surfacemount U4 package for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/397.
Documents
Technical documentation and resources