2N4931-Transistor Series

MIL-PRF-19500/397

Catalog

MIL-PRF-19500/397

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]
Microchip Technology 2N4931	TO-205AD TO-39-3 Metal Can	250 V	50 hFE	1.2 V	250 nA	1 W	Through Hole	PNP	TO-39	200 mA

Catalog

MIL-PRF-19500/397

Key Features

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Description

This specification covers the performance requirements for PNP, silicon, high-voltage 2N3743, 2N4930 and 2N4931 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/397. Two levels of product assurance (JANHC and JANKC) for die are provided for each unencapsulated device. The device package outlines are as follows: TO-39 , and surfacemount U4 package for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/397.