Discrete Semiconductor Products
STGP3NC120HD
ActiveSTMicroelectronics
7 A, 1200 V VERY FAST IGBT WITH ULTRAFAST DIODE
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Discrete Semiconductor Products
STGP3NC120HD
ActiveSTMicroelectronics
7 A, 1200 V VERY FAST IGBT WITH ULTRAFAST DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP3NC120HD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 14 A |
| Current - Collector Pulsed (Icm) | 20 A |
| Gate Charge | 24 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 75 W |
| Reverse Recovery Time (trr) | 51 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 236 µJ, 290 µJ |
| Td (on/off) @ 25°C | 118 ns, 15 ns |
| Test Condition | 10 Ohm, 15 V, 800 V, 3 A |
| Vce(on) (Max) @ Vge, Ic | 2.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 6855 | $ 2.44 | |
Description
General part information
STGP3NC120HD Series
This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode.