Discrete Semiconductor Products

NDT452P

Obsolete

ON Semiconductor

MOSFET P-CH 30V 3A SOT-223-4

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Discrete Semiconductor Products

NDT452P

Obsolete

ON Semiconductor

MOSFET P-CH 30V 3A SOT-223-4

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NDT452P

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	525 pF
Mounting Type	Surface Mount
Package / Case	TO-261AA, TO-261-4
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

NDT452AP Series

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor NDT452P	525 pF	3 V	Surface Mount	30 V	MOSFET (Metal Oxide)	SOT-223-4	3 A	180 mOhm	TO-261-4 TO-261AA	P-Channel	25 nC
ON Semiconductor NDT452AP	690 pF	2.8 V	Surface Mount	30 V	MOSFET (Metal Oxide)	SOT-223-4	5 A		TO-261-4 TO-261AA	P-Channel		30 nC	4.5 V 10 V	3 W	20 V	65 mOhm	150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NDT452AP Series

Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

Documents

Technical documentation and resources