Specification	NDT452AP

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	690 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs [Max]	65 mOhm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

NDT452AP Series

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor NDT452P	525 pF	3 V	Surface Mount	30 V	MOSFET (Metal Oxide)	SOT-223-4	3 A	180 mOhm	TO-261-4 TO-261AA	P-Channel	25 nC
ON Semiconductor NDT452AP	690 pF	2.8 V	Surface Mount	30 V	MOSFET (Metal Oxide)	SOT-223-4	5 A		TO-261-4 TO-261AA	P-Channel		30 nC	4.5 V 10 V	3 W	20 V	65 mOhm	150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.93
		10	$ 0.76
		100	$ 0.59
		500	$ 0.50
		1000	$ 0.41
		2000	$ 0.38
	Digi-Reel®	1	$ 0.93
		10	$ 0.76
		100	$ 0.59
		500	$ 0.50
		1000	$ 0.41
		2000	$ 0.38
	Tape & Reel (TR)	4000	$ 0.38
		8000	$ 0.37
		12000	$ 0.35
		28000	$ 0.35
Newark	Each (Supplied on Full Reel)	4000	$ 0.38
		8000	$ 0.37
		16000	$ 0.36
ON Semiconductor	N/A	1	$ 0.36

Description

General part information

NDT452AP Series

Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.