NDT452AP Series

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Catalog

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor NDT452P	525 pF	3 V	Surface Mount	30 V	MOSFET (Metal Oxide)	SOT-223-4	3 A	180 mOhm	TO-261-4 TO-261AA	P-Channel	25 nC
ON Semiconductor NDT452AP	690 pF	2.8 V	Surface Mount	30 V	MOSFET (Metal Oxide)	SOT-223-4	5 A		TO-261-4 TO-261AA	P-Channel		30 nC	4.5 V 10 V	3 W	20 V	65 mOhm	150 °C	-65 °C

Catalog

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Key Features

-5A, -30V.RDS(ON)= 0.065 Ω @ VGS= -10VRDS(ON)= 0.1 Ω @ VGS= -4.5V

• High density cell design for extremely low RDS(ON)

• High power and current handling capability in a widely used surface mount package

Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.