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2N1893
Discrete Semiconductor Products

2N5682E3

Active
Microchip Technology

NPN SILICON AMPLIFIER 100V TO 120V, 1A

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Search across all available documentation for this part.

2N1893
Discrete Semiconductor Products

2N5682E3

Active
Microchip Technology

NPN SILICON AMPLIFIER 100V TO 120V, 1A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N5682E3
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Frequency - Transition30 MHz
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Power - Max [Max]1 W
Supplier Device PackageTO-5AA
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max) [Max]120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 20.34
Microchip DirectN/A 1$ 21.90
NewarkEach 100$ 20.33
500$ 19.55

Description

General part information

2N5682E3-Transistor-RoHS Series

This specification covers the performance requirements for NPN, silicon, amplifier, 2N5681 and 2N5682 transistors Complimentary to the 2N5679 and 2N5680 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/583 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices.

Documents

Technical documentation and resources