
2N5682E3
ActiveNPN SILICON AMPLIFIER 100V TO 120V, 1A
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2N5682E3
ActiveNPN SILICON AMPLIFIER 100V TO 120V, 1A
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5682E3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Frequency - Transition | 30 MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 120 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 20.34 | |
| Microchip Direct | N/A | 1 | $ 21.90 | |
| Newark | Each | 100 | $ 20.33 | |
| 500 | $ 19.55 | |||
Description
General part information
2N5682E3-Transistor-RoHS Series
This specification covers the performance requirements for NPN, silicon, amplifier, 2N5681 and 2N5682 transistors Complimentary to the 2N5679 and 2N5680 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/583 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices.
Documents
Technical documentation and resources