2N5682E3-Transistor-RoHS Series

NPN Silicon Amplifier 100V to 120V, 1A

Catalog

NPN Silicon Amplifier 100V to 120V, 1A

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Power - Max [Max]
Microchip Technology 2N5682E3	TO-205AA TO-5-3 Metal Can	40	30 MHz	10 µA	1 A	TO-5AA	Through Hole	120 V	NPN	1 W

Catalog

NPN Silicon Amplifier 100V to 120V, 1A

Key Features

- The device package outlines are as follows: TO-205AD (TO-39) for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/583.

Description

This specification covers the performance requirements for NPN, silicon, amplifier, 2N5681 and 2N5682 transistors Complimentary to the 2N5679 and 2N5680 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/583 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices.