
Discrete Semiconductor Products
SIHB24N65E-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 650V 24A D2PAK
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Discrete Semiconductor Products
SIHB24N65E-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 650V 24A D2PAK
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SIHB24N65E-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2740 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 145 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.70 | |
| 50 | $ 4.52 | |||
| 100 | $ 3.87 | |||
| 500 | $ 3.44 | |||
| 1000 | $ 2.95 | |||
| 2000 | $ 2.78 | |||
Description
General part information
SIHB24 Series
N-Channel 650 V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Documents
Technical documentation and resources