SIHB24 Series

Catalog

MOSFET N-CH 650V 24A D2PAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHB24N65E-E3	-55 °C	150 °C	122 nC	2740 pF	650 V	24 A	145 mOhm	N-Channel	30 V	250 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	Surface Mount	4 V
Vishay General Semiconductor - Diodes Division SIHB24N80AE-GE3	-55 °C	150 °C		1836 pF	800 V	21 A		N-Channel	30 V		TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)		Surface Mount	4 V	208 W	89 nC	184 mOhm
Vishay General Semiconductor - Diodes Division SIHB24N65EF-GE3	-55 °C	150 °C	122 nC	2774 pF	650 V	24 A	156 mOhm	N-Channel	30 V	250 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	Surface Mount	4 V
Vishay General Semiconductor - Diodes Division SIHB24N65E-GE3	-55 °C	150 °C	122 nC	2740 pF	650 V	24 A	145 mOhm	N-Channel	30 V	250 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	Surface Mount	4 V