Discrete Semiconductor Products

SIHB24N80AE-GE3

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MOSFET N-CH 800V 21A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 800V 21A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB24N80AE-GE3

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	89 nC
Input Capacitance (Ciss) (Max) @ Vds	1836 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs [Max]	184 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHB24N65E-E3	-55 °C	150 °C	122 nC	2740 pF	650 V	24 A	145 mOhm	N-Channel	30 V	250 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	Surface Mount	4 V
Vishay General Semiconductor - Diodes Division SIHB24N80AE-GE3	-55 °C	150 °C		1836 pF	800 V	21 A		N-Channel	30 V		TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)		Surface Mount	4 V	208 W	89 nC	184 mOhm
Vishay General Semiconductor - Diodes Division SIHB24N65EF-GE3	-55 °C	150 °C	122 nC	2774 pF	650 V	24 A	156 mOhm	N-Channel	30 V	250 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	Surface Mount	4 V
Vishay General Semiconductor - Diodes Division SIHB24N65E-GE3	-55 °C	150 °C	122 nC	2740 pF	650 V	24 A	145 mOhm	N-Channel	30 V	250 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	Surface Mount	4 V

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General part information

N-Channel 800 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources