Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ADPA9007ACGZN-R7 |
|---|---|
| Frequency [Max] | 28 GHz |
| Frequency [Min] | 0 Hz |
| Gain | 12 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 4.5 dB |
| P1dB | 33 dBm |
| Package / Case | 32-LFQFN Exposed Pad, CSP |
| RF Type | Radar |
| Supplier Device Package | 32-LFCSP-CAV |
| Supplier Device Package [x] | 5 |
| Supplier Device Package [y] | 5 |
| Test Frequency [Max] | 16 GHz |
| Test Frequency [Min] | 2 GHz |
| Voltage - Supply [Max] | 15 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 1000 | $ 216.54 | |
Description
General part information
ADPA9007 Series
The ADPA9007 is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally-matched and DC-coupled. The ADPA9007 includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.The ADPA9007 amplifier provides a gain of 12.5 dB, an output power for 1 dB compression (OP1dB) of 33 dBm, and an output third-order intercept (OIP3) of 45 dBm from 2 GHz to 16 GHz. The amplifier operates from a typical supply voltage of 15 V and has a 500 mA typical quiescent bias current, which is adjustable.The ADPA9007 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process. The amplifier is housed in an RoHS-compliant, 32-Lead, 5 mm × 5 mm, lead frame chip scale package, premolded cavity [LFCSP_CAV] and is specified for operation from −40°C to +85°C.ApplicationsElectronic warfareRadarTest and measurement equipment
Documents
Technical documentation and resources