Catalog
DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
Key Features
• Wideband, internally-matched, RF power amplifier
• DC-coupled input and output
• Integrated RF power detector
• Integrated temperature sensor
• Gain: 12.5 dB typical at 2 GHz to 16 GHz
• OP1dB: 33 dBm typical at 2 GHz to 16 GHz
• PSAT: 34 dBm typical at 2 GHz to 16 GHz
• OIP3: 45 dBm typical at 2 GHz to 16 GHz
• 32-Lead, 5.00 mm × 5.00 mm, LFCSP_CAV package
Description
AI
The ADPA9007 is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally-matched and DC-coupled. The ADPA9007 includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.The ADPA9007 amplifier provides a gain of 12.5 dB, an output power for 1 dB compression (OP1dB) of 33 dBm, and an output third-order intercept (OIP3) of 45 dBm from 2 GHz to 16 GHz. The amplifier operates from a typical supply voltage of 15 V and has a 500 mA typical quiescent bias current, which is adjustable.The ADPA9007 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process. The amplifier is housed in an RoHS-compliant, 32-Lead, 5 mm × 5 mm, lead frame chip scale package, premolded cavity [LFCSP_CAV] and is specified for operation from −40°C to +85°C.ApplicationsElectronic warfareRadarTest and measurement equipment