ADPA7008CHIP
Active20 GHZ TO 54 GHZ, GAAS, PHEMT, MMIC, 31 DBM (1 W) POWER AMPLIFIER
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ADPA7008CHIP
Active20 GHZ TO 54 GHZ, GAAS, PHEMT, MMIC, 31 DBM (1 W) POWER AMPLIFIER
Technical Specifications
Parameters and characteristics for this part
| Specification | ADPA7008CHIP |
|---|---|
| Current - Supply | 1.5 A |
| Frequency [Max] | 54 GHz |
| Frequency [Min] | 20 GHz |
| Gain | 18.5 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 6 dB |
| P1dB | 30.5 dBm |
| Package / Case | Die |
| RF Type | General Purpose |
| Supplier Device Package | Die |
| Test Frequency [Max] | 54 GHz |
| Test Frequency [Min] | 20 GHz |
| Voltage - Supply [Max] | 5 V |
| Voltage - Supply [Min] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
ADPA7008 Series
The ADPA7008CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (1 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 18 dB, an output power for 1 dB compression (P1dB) of 30.5 dBm, and a typical output third-order intercept (IP3) of 38 dBm at 22 GHz to 42 GHz. The ADPA7008CHIP requires 1500 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.APPLICATIONSMilitary and spaceTest instrumentationSatellite communications