Discrete Semiconductor Products
STH140N8F7-2
ActiveSTMicroelectronics
N-CHANNEL 80 V, 3.3 MOHM TYP., 90 A STRIPFET F7 POWER MOSFET IN H2PAK-2 PACKAGE
Discrete Semiconductor Products
STH140N8F7-2
ActiveSTMicroelectronics
N-CHANNEL 80 V, 3.3 MOHM TYP., 90 A STRIPFET F7 POWER MOSFET IN H2PAK-2 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STH140N8F7-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 6340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 200 W |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 458 | $ 3.44 | |
Description
General part information
STH140N8F7-2 Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources