STH140N8F7-2 Series
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
Manufacturer: STMicroelectronics
Catalog
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
| Part | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 200 W | H2Pak-2 | 4.5 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 mOhm | 96 nC | MOSFET (Metal Oxide) | 10 V | 20 V | 175 °C | -55 °C | 80 V | 6340 pF | N-Channel | 90 A | Surface Mount |
Description
AI
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.