Discrete Semiconductor Products

BFR740L3RHE6327XTSA1

Active

BIPOLAR - RF TRANSISTOR, NPN, 4 V, 47 GHZ, 160 MW, 40 MA, 160 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

BIPOLAR - RF TRANSISTOR, NPN, 4 V, 47 GHZ, 160 MW, 40 MA, 160 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BFR740L3RHE6327XTSA1

Current - Collector (Ic) (Max) [Max]	30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	42 GHz
Gain	24.5 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	0.8 dB
Noise Figure (dB Typ @ f) [Min]	0.5 dB
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power - Max [Max]	160 mW
Supplier Device Package	PG-TSLP-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	4.7 V

Part	Gain	Current - Collector (Ic) (Max) [Max]	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Power - Max [Max]	Mounting Type	Frequency - Transition	Package / Case	Transistor Type	Noise Figure (dB Typ @ f)
INFINEON BFR740L3RHE6327XTSA1	24.5 dB	30 mA	0.5 dB	0.8 dB	PG-TSLP-3	160	4.7 V	150 °C	160 mW	Surface Mount	42 GHz	SC-101 SOT-883	NPN
INFINEON BFR740EL3E6829XTSA1	11 dB	40 mA			PG-TSLP-3-10 TSLP-3-10	160		150 °C	160 mW	Surface Mount	42 GHz	3-XFDFN	NPN	1.5 dB

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General part information

The BFP740L3RH is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Technical documentation and resources