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BFR740EL3E6829XTSA1
Discrete Semiconductor Products

BFR740EL3E6829XTSA1

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INFINEON

RF BIP TRANSISTORS

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BFR740EL3E6829XTSA1
Discrete Semiconductor Products

BFR740EL3E6829XTSA1

Active
INFINEON

RF BIP TRANSISTORS

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Technical Specifications

Parameters and characteristics for this part

SpecificationBFR740EL3E6829XTSA1
Current - Collector (Ic) (Max) [Max]40 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]160
Frequency - Transition42 GHz
Gain11 dB
Mounting TypeSurface Mount
Noise Figure (dB Typ @ f)1.5 dB
Operating Temperature150 °C
Package / Case3-XFDFN
Power - Max [Max]160 mW
Supplier Device PackagePG-TSLP-3-10, TSLP-3-10
Transistor TypeNPN
PartGainCurrent - Collector (Ic) (Max) [Max]Noise Figure (dB Typ @ f) [Min]Noise Figure (dB Typ @ f) [Max]Supplier Device PackageDC Current Gain (hFE) (Min) @ Ic, Vce [Min]Voltage - Collector Emitter Breakdown (Max) [Max]Operating TemperaturePower - Max [Max]Mounting TypeFrequency - TransitionPackage / CaseTransistor TypeNoise Figure (dB Typ @ f)
24.5 dB
30 mA
0.5 dB
0.8 dB
PG-TSLP-3
160
4.7 V
150 °C
160 mW
Surface Mount
42 GHz
SC-101
SOT-883
NPN
11 dB
40 mA
PG-TSLP-3-10
TSLP-3-10
160
150 °C
160 mW
Surface Mount
42 GHz
3-XFDFN
NPN
1.5 dB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.38
464292$ 0.60
Tape & Reel (TR) 15000$ 0.37

Description

General part information

BFR740 Series

The BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) available in a low profile package.

Documents

Technical documentation and resources

No documents available