Discrete Semiconductor Products

IPW60R099P7XKSA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

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DocumentsTechnical Data Sheet EN Datasheet

Discrete Semiconductor Products

IPW60R099P7XKSA1

Active

INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R099P7XKSA1

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1952 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	117 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPW60R099 Series

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Qualification	Grade
INFINEON IPW60R099C6FKSA1	3.5 V	2660 pF	20 V	TO-247-3	37.9 A	119 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm	278 W	Through Hole	PG-TO247-3-1
INFINEON IPW60R099P7XKSA1	4 V		20 V	TO-247-3	31 A		150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm		Through Hole	PG-TO247-3	117 W	45 nC	1952 pF
INFINEON IPW60R099C7XKSA1	4 V	1819 pF	20 V	TO-247-3	14 A	42 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm		Through Hole	PG-TO247-3	110 W
INFINEON IPW60R099CPFKSA1	3.5 V	2800 pF	20 V	TO-247-3	31 A	80 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	650 V			Through Hole	PG-TO247-3-1	255 W			99 mOhm
INFINEON IPW60R099CPAFKSA1	3.5 V	2800 pF	20 V	TO-247-3	31 A	80 nC	150 °C	-40 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	105 mOhm		Through Hole	PG-TO247-3	255 W				AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	300	$ 4.24
	Tube	1	$ 5.31
		10	$ 3.54
		100	$ 2.54
		500	$ 2.11
		1000	$ 2.05
Newark	Each	1	$ 4.54
		10	$ 4.16
		25	$ 2.72
		50	$ 2.57
		100	$ 2.40
		480	$ 2.36
		720	$ 2.28

Description

General part information

IPW60R099 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet