Discrete Semiconductor Products

IPW60R099C6FKSA1

NRND

INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IPW60R099C6FKSA1

NRND

INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R099C6FKSA1

Current - Continuous Drain (Id) @ 25°C	37.9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	119 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	278 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPW60R099 Series

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Qualification	Grade
INFINEON IPW60R099C6FKSA1	3.5 V	2660 pF	20 V	TO-247-3	37.9 A	119 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm	278 W	Through Hole	PG-TO247-3-1
INFINEON IPW60R099P7XKSA1	4 V		20 V	TO-247-3	31 A		150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm		Through Hole	PG-TO247-3	117 W	45 nC	1952 pF
INFINEON IPW60R099C7XKSA1	4 V	1819 pF	20 V	TO-247-3	14 A	42 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm		Through Hole	PG-TO247-3	110 W
INFINEON IPW60R099CPFKSA1	3.5 V	2800 pF	20 V	TO-247-3	31 A	80 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	650 V			Through Hole	PG-TO247-3-1	255 W			99 mOhm
INFINEON IPW60R099CPAFKSA1	3.5 V	2800 pF	20 V	TO-247-3	31 A	80 nC	150 °C	-40 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	105 mOhm		Through Hole	PG-TO247-3	255 W				AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	111	$ 6.97
	Tube	1	$ 6.97
		30	$ 4.01
		120	$ 3.36
		510	$ 2.97
Newark	Each	1	$ 6.70
		10	$ 6.28
		25	$ 4.33
		50	$ 4.02
		100	$ 3.71
		480	$ 3.67
		720	$ 3.32

Description

General part information

IPW60R099 Series

CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Documents

Technical documentation and resources