Discrete Semiconductor Products

IPW60R099C7XKSA1

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INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM; HIGHEST PERFORMANCE

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DocumentsDatasheet Application Note EN

Discrete Semiconductor Products

IPW60R099C7XKSA1

Active

INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet Application Note EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R099C7XKSA1

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1819 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPW60R099 Series

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Qualification	Grade
INFINEON IPW60R099C6FKSA1	3.5 V	2660 pF	20 V	TO-247-3	37.9 A	119 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm	278 W	Through Hole	PG-TO247-3-1
INFINEON IPW60R099P7XKSA1	4 V		20 V	TO-247-3	31 A		150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm		Through Hole	PG-TO247-3	117 W	45 nC	1952 pF
INFINEON IPW60R099C7XKSA1	4 V	1819 pF	20 V	TO-247-3	14 A	42 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	99 mOhm		Through Hole	PG-TO247-3	110 W
INFINEON IPW60R099CPFKSA1	3.5 V	2800 pF	20 V	TO-247-3	31 A	80 nC	150 °C	-55 °C	10 V	N-Channel	MOSFET (Metal Oxide)	650 V			Through Hole	PG-TO247-3-1	255 W			99 mOhm
INFINEON IPW60R099CPAFKSA1	3.5 V	2800 pF	20 V	TO-247-3	31 A	80 nC	150 °C	-40 °C	10 V	N-Channel	MOSFET (Metal Oxide)	600 V	105 mOhm		Through Hole	PG-TO247-3	255 W				AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	240	$ 5.56
	Tube	240	$ 2.68
Newark	Each	1	$ 7.46
		10	$ 6.43
		25	$ 5.39
		50	$ 5.05
		100	$ 4.69
		480	$ 4.68
		720	$ 3.69

Description

General part information

IPW60R099 Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.