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Discrete Semiconductor Products

CSD19531Q5A

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Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 6.4 MOHM

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VSONP (DQJ)
Discrete Semiconductor Products

CSD19531Q5A

Active
Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 6.4 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD19531Q5A
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]48 nC
Input Capacitance (Ciss) (Max) @ Vds3870 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)3.3 W, 125 W
Rds On (Max) @ Id, Vgs6.4 mOhm
Supplier Device Package8-VSONP (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.70
10$ 1.41
100$ 1.12
500$ 0.95
1000$ 0.81
Digi-Reel® 1$ 1.70
10$ 1.41
100$ 1.12
500$ 0.95
1000$ 0.81
Tape & Reel (TR) 2500$ 0.77
5000$ 0.74
12500$ 0.71
Texas InstrumentsLARGE T&R 1$ 1.16
100$ 0.96
250$ 0.69
1000$ 0.52

Description

General part information

CSD19531Q5A Series

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Typical RθJA= 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC= 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.