CSD19531KCS
Active100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE TO-220, 7.7 MOHM
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CSD19531KCS
Active100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE TO-220, 7.7 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD19531KCS |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3870 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 214 W |
| Rds On (Max) @ Id, Vgs [Max] | 7.7 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.13 | |
| 50 | $ 1.71 | |||
| 100 | $ 1.41 | |||
| 500 | $ 1.19 | |||
| 1000 | $ 1.01 | |||
| 2000 | $ 0.96 | |||
| 5000 | $ 0.92 | |||
| 10000 | $ 0.89 | |||
| Texas Instruments | TUBE | 1 | $ 1.40 | |
| 100 | $ 1.15 | |||
| 250 | $ 0.83 | |||
| 1000 | $ 0.62 | |||
Description
General part information
CSD19531Q5A Series
This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
Typical RθJA= 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC= 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%
This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
Documents
Technical documentation and resources
