Discrete Semiconductor Products

BSZ070N08LS5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 7 MOHM;

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DocumentsBSZ070N08LS5ATMA1 | Datasheet

Discrete Semiconductor Products

BSZ070N08LS5ATMA1

Active

INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 7 MOHM;

Deep-Dive with AI

DocumentsBSZ070N08LS5ATMA1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ070N08LS5ATMA1

Current - Continuous Drain (Id) @ 25°C	74 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	2340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Rds On (Max) @ Id, Vgs	7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

OptiMOS 5 Series

Part	FET Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Grade	Supplier Device Package	Qualification	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPB049N08N5ATMA1	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C	6 V 10 V	53 nC	3770 pF	3.8 V	4.9 mOhm	Surface Mount	MOSFET (Metal Oxide)	20 V	80 V	125 W
INFINEON BSZ070N08LS5ATMA1	N-Channel	8-PowerTDFN	150 °C	-55 °C	4.5 V 10 V	25 nC		2.3 V		Surface Mount	MOSFET (Metal Oxide)	20 V	80 V		74 A	2340 pF	7 mOhm
INFINEON IAUC120N06S5N022ATMA1	N-Channel	8-PowerTDFN	175 °C	-55 °C	7 V 10 V	68 nC	4930 pF	3.4 V		Surface Mount	MOSFET (Metal Oxide)	20 V	60 V	136 W	170 A		2.24 mOhm	Automotive	PG-TDSON-8-34	AEC-Q101
INFINEON IAUCN10S5L094DATMA1		8-PowerTDFN	175 °C	-55 °C		30 nC		2.2 V		Surface Mount	MOSFET (Metal Oxide)		100 V		66 A	2180 pF	9.4 mOhm	Automotive	PG-TDSON-8-60	AEC-Q101	2 N-Channel 2 N-Channel (Dual)	96 W
INFINEON IQE046N08LM5CGSCATMA1	N-Channel	9-PowerWDFN	175 °C	-55 °C	4.5 V 10 V		3250 pF	2.3 V		Surface Mount	MOSFET (Metal Oxide)	20 V	80 V	2.5 W 100 W	15.6 A 99 A		4.6 mOhm		PG-WHTFN-9				38 nC
INFINEON IPP020N08N5AKSA1	N-Channel	TO-220-3	175 °C	-55 °C	6 V 10 V	223 nC		3.8 V		Through Hole	MOSFET (Metal Oxide)	20 V	80 V	375 W	120 A	16900 pF	0.002 mOhm		PG-TO220-3
INFINEON BSZ017NE2LS5IATMA1	N-Channel	8-PowerTDFN	150 °C	-55 °C	4.5 V 10 V	30 nC	2000 pF	2 V		Surface Mount	MOSFET (Metal Oxide)	16 V	25 V	2.1 W 50 W	27 A 40 A		1.7 mOhm
INFINEON BSC072N08NS5ATMA1	N-Channel	8-PowerTDFN	150 °C	-55 °C	6 V 10 V		2100 pF	3.8 V		Surface Mount	MOSFET (Metal Oxide)	20 V	80 V	2.5 W 69 W	74 A		7.2 mOhm		PG-TDSON-8-7				29 nC
INFINEON IAUC41N06S5N102ATMA1	N-Channel	8-PowerTDFN	175 °C	-55 °C	7 V 10 V		1112.1 pF	3.4 V		Surface Mount	MOSFET (Metal Oxide)	20 V	60 V	42 W	47 A		10.2 mOhm	Automotive	PG-TDSON-8-33	AEC-Q101			16.3 nC
INFINEON IAUZ40N06S5N050ATMA1	N-Channel	8-PowerTDFN	175 °C	-55 °C		30.5 nC	2200 pF	3.4 V		Surface Mount	MOSFET (Metal Oxide)	20 V	60 V	71 W	40 A		5 mOhm	Automotive	PG-TSDSON-8-33	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	8582	$ 1.31
Mouser	N/A	1	$ 1.16
		10	$ 0.89
		25	$ 0.89
		100	$ 0.63
		500	$ 0.63
		5000	$ 0.63
Newark	Each (Supplied on Full Reel)	5000	$ 0.63

Description

General part information

OptiMOS 5 Series

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Qg) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Documents

Technical documentation and resources

BSZ070N08LS5ATMA1 | Datasheet

Datasheet