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IAUC41N06S5N102ATMA1
Discrete Semiconductor Products

IAUC41N06S5N102ATMA1

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INFINEON

IAUC41N06S5N102 IS AN AUTOMOTIVE MOSFET OFFERING 60V, N-CH, 10.2 MΩ MAX, SS08 (5X6), OPTIMOS™-5 TECHNOLOGY WITH LOW RDSON, QG, AND GATE CAPACITANCE.

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IAUC41N06S5N102ATMA1
Discrete Semiconductor Products

IAUC41N06S5N102ATMA1

Active
INFINEON

IAUC41N06S5N102 IS AN AUTOMOTIVE MOSFET OFFERING 60V, N-CH, 10.2 MΩ MAX, SS08 (5X6), OPTIMOS™-5 TECHNOLOGY WITH LOW RDSON, QG, AND GATE CAPACITANCE.

Technical Specifications

Parameters and characteristics for this part

SpecificationIAUC41N06S5N102ATMA1
Current - Continuous Drain (Id) @ 25°C47 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)7 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]16.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1112.1 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)42 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs10.2 mOhm
Supplier Device PackagePG-TDSON-8-33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.4 V
PartFET TypePackage / CaseOperating Temperature [Max]Operating Temperature [Min]Drive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ Vds [Max]Vgs(th) (Max) @ IdRds On (Max) @ Id, Vgs [Max]Mounting TypeTechnologyVgs (Max)Drain to Source Voltage (Vdss)Power Dissipation (Max)Current - Continuous Drain (Id) @ 25°CInput Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, VgsGradeSupplier Device PackageQualificationConfigurationPower - Max [Max]Gate Charge (Qg) (Max) @ Vgs [Max]
N-Channel
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
6 V
10 V
53 nC
3770 pF
3.8 V
4.9 mOhm
Surface Mount
MOSFET (Metal Oxide)
20 V
80 V
125 W
N-Channel
8-PowerTDFN
150 °C
-55 °C
4.5 V
10 V
25 nC
2.3 V
Surface Mount
MOSFET (Metal Oxide)
20 V
80 V
74 A
2340 pF
7 mOhm
N-Channel
8-PowerTDFN
175 °C
-55 °C
7 V
10 V
68 nC
4930 pF
3.4 V
Surface Mount
MOSFET (Metal Oxide)
20 V
60 V
136 W
170 A
2.24 mOhm
Automotive
PG-TDSON-8-34
AEC-Q101
8-PowerTDFN
175 °C
-55 °C
30 nC
2.2 V
Surface Mount
MOSFET (Metal Oxide)
100 V
66 A
2180 pF
9.4 mOhm
Automotive
PG-TDSON-8-60
AEC-Q101
2 N-Channel
2 N-Channel (Dual)
96 W
N-Channel
9-PowerWDFN
175 °C
-55 °C
4.5 V
10 V
3250 pF
2.3 V
Surface Mount
MOSFET (Metal Oxide)
20 V
80 V
2.5 W
100 W
15.6 A
99 A
4.6 mOhm
PG-WHTFN-9
38 nC
N-Channel
TO-220-3
175 °C
-55 °C
6 V
10 V
223 nC
3.8 V
Through Hole
MOSFET (Metal Oxide)
20 V
80 V
375 W
120 A
16900 pF
0.002 mOhm
PG-TO220-3
N-Channel
8-PowerTDFN
150 °C
-55 °C
4.5 V
10 V
30 nC
2000 pF
2 V
Surface Mount
MOSFET (Metal Oxide)
16 V
25 V
2.1 W
50 W
27 A
40 A
1.7 mOhm
N-Channel
8-PowerTDFN
150 °C
-55 °C
6 V
10 V
2100 pF
3.8 V
Surface Mount
MOSFET (Metal Oxide)
20 V
80 V
2.5 W
69 W
74 A
7.2 mOhm
PG-TDSON-8-7
29 nC
N-Channel
8-PowerTDFN
175 °C
-55 °C
7 V
10 V
1112.1 pF
3.4 V
Surface Mount
MOSFET (Metal Oxide)
20 V
60 V
42 W
47 A
10.2 mOhm
Automotive
PG-TDSON-8-33
AEC-Q101
16.3 nC
N-Channel
8-PowerTDFN
175 °C
-55 °C
30.5 nC
2200 pF
3.4 V
Surface Mount
MOSFET (Metal Oxide)
20 V
60 V
71 W
40 A
5 mOhm
Automotive
PG-TSDSON-8-33
AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 14166$ 1.19
MouserN/A 1$ 1.13
10$ 0.78
100$ 0.52
500$ 0.41
1000$ 0.34
2500$ 0.34
5000$ 0.30
NewarkEach (Supplied on Cut Tape) 1$ 1.16
10$ 0.81
25$ 0.72
50$ 0.63
100$ 0.55
250$ 0.49
500$ 0.42
1000$ 0.35

Description

General part information

OptiMOS 5 Series

The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard SingleSS08 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses