
IAUC41N06S5N102ATMA1
ActiveIAUC41N06S5N102 IS AN AUTOMOTIVE MOSFET OFFERING 60V, N-CH, 10.2 MΩ MAX, SS08 (5X6), OPTIMOS™-5 TECHNOLOGY WITH LOW RDSON, QG, AND GATE CAPACITANCE.
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IAUC41N06S5N102ATMA1
ActiveIAUC41N06S5N102 IS AN AUTOMOTIVE MOSFET OFFERING 60V, N-CH, 10.2 MΩ MAX, SS08 (5X6), OPTIMOS™-5 TECHNOLOGY WITH LOW RDSON, QG, AND GATE CAPACITANCE.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IAUC41N06S5N102ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 47 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16.3 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1112.1 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 42 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 10.2 mOhm |
| Supplier Device Package | PG-TDSON-8-33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.4 V |
| Part | FET Type | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Grade | Supplier Device Package | Qualification | Configuration | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 175 °C | -55 °C | 6 V 10 V | 53 nC | 3770 pF | 3.8 V | 4.9 mOhm | Surface Mount | MOSFET (Metal Oxide) | 20 V | 80 V | 125 W | |||||||||
INFINEON | N-Channel | 8-PowerTDFN | 150 °C | -55 °C | 4.5 V 10 V | 25 nC | 2.3 V | Surface Mount | MOSFET (Metal Oxide) | 20 V | 80 V | 74 A | 2340 pF | 7 mOhm | |||||||||
INFINEON | N-Channel | 8-PowerTDFN | 175 °C | -55 °C | 7 V 10 V | 68 nC | 4930 pF | 3.4 V | Surface Mount | MOSFET (Metal Oxide) | 20 V | 60 V | 136 W | 170 A | 2.24 mOhm | Automotive | PG-TDSON-8-34 | AEC-Q101 | |||||
INFINEON | 8-PowerTDFN | 175 °C | -55 °C | 30 nC | 2.2 V | Surface Mount | MOSFET (Metal Oxide) | 100 V | 66 A | 2180 pF | 9.4 mOhm | Automotive | PG-TDSON-8-60 | AEC-Q101 | 2 N-Channel 2 N-Channel (Dual) | 96 W | |||||||
INFINEON | N-Channel | 9-PowerWDFN | 175 °C | -55 °C | 4.5 V 10 V | 3250 pF | 2.3 V | Surface Mount | MOSFET (Metal Oxide) | 20 V | 80 V | 2.5 W 100 W | 15.6 A 99 A | 4.6 mOhm | PG-WHTFN-9 | 38 nC | |||||||
INFINEON | N-Channel | TO-220-3 | 175 °C | -55 °C | 6 V 10 V | 223 nC | 3.8 V | Through Hole | MOSFET (Metal Oxide) | 20 V | 80 V | 375 W | 120 A | 16900 pF | 0.002 mOhm | PG-TO220-3 | |||||||
INFINEON | N-Channel | 8-PowerTDFN | 150 °C | -55 °C | 4.5 V 10 V | 30 nC | 2000 pF | 2 V | Surface Mount | MOSFET (Metal Oxide) | 16 V | 25 V | 2.1 W 50 W | 27 A 40 A | 1.7 mOhm | ||||||||
INFINEON | N-Channel | 8-PowerTDFN | 150 °C | -55 °C | 6 V 10 V | 2100 pF | 3.8 V | Surface Mount | MOSFET (Metal Oxide) | 20 V | 80 V | 2.5 W 69 W | 74 A | 7.2 mOhm | PG-TDSON-8-7 | 29 nC | |||||||
INFINEON | N-Channel | 8-PowerTDFN | 175 °C | -55 °C | 7 V 10 V | 1112.1 pF | 3.4 V | Surface Mount | MOSFET (Metal Oxide) | 20 V | 60 V | 42 W | 47 A | 10.2 mOhm | Automotive | PG-TDSON-8-33 | AEC-Q101 | 16.3 nC | |||||
INFINEON | N-Channel | 8-PowerTDFN | 175 °C | -55 °C | 30.5 nC | 2200 pF | 3.4 V | Surface Mount | MOSFET (Metal Oxide) | 20 V | 60 V | 71 W | 40 A | 5 mOhm | Automotive | PG-TSDSON-8-33 | AEC-Q101 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
OptiMOS 5 Series
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard SingleSS08 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses
Documents
Technical documentation and resources